Roshow Technology starts third-generation power semiconductor industrial park project
2020-11-30 16:50:22 [Print]
On November 28, the groundbreaking activity of Roshow Technology's third-generation power semiconductor (silicon carbide) industrial park project was held in Changfeng County, Hefei.
It is reported that the project has a planned total investment of RMB10 billion (USD1.44 billion) and covers an area of 88 acres. It is mainly to build a third-generation power semiconductor (silicon carbide), including R&D and production base of equipment manufacturing, silicon carbide crystal growth, substrate production, and epitaxial growth. The first-phase investment of the project is RMB2.1 billion ((USD317.09 million), and after reaching full capacity, it can form an annual production capacity of 240,000 conductive silicon carbide substrates and 50,000 epitaxial wafers.
It is reported that the project has a planned total investment of RMB10 billion (USD1.44 billion) and covers an area of 88 acres. It is mainly to build a third-generation power semiconductor (silicon carbide), including R&D and production base of equipment manufacturing, silicon carbide crystal growth, substrate production, and epitaxial growth. The first-phase investment of the project is RMB2.1 billion ((USD317.09 million), and after reaching full capacity, it can form an annual production capacity of 240,000 conductive silicon carbide substrates and 50,000 epitaxial wafers.
Silicon Carbide Green 98%min JIS2000 FOB China
Unit:USD/mt
China green silicon carbide producers' number MoM output increase statistics by province by month
Unit: pcs
